Manufacturer Part Number
NGTB25N120FL2WG
Manufacturer
onsemi
Introduction
High power single IGBT transistor for industrial and power applications
Product Features and Performance
Field Stop IGBT technology
High current handling capability up to 50A
Low on-state voltage drop of 2.4V at 25A
Fast switching speed with turn-on time of 87ns and turn-off time of 179ns
High power handling capacity up to 385W
Product Advantages
Excellent efficiency due to low conduction and switching losses
Reliable operation over wide temperature range (-55°C to 175°C)
Rugged and robust design for industrial environments
Key Technical Parameters
Collector-Emitter Voltage (Vces): 1200V
Collector Current (Ic): 50A
Collector-Emitter Saturation Voltage (Vce(on)): 2.4V @ 15V, 25A
Gate Charge (Qg): 178nC
Reverse Recovery Time (trr): 154ns
Quality and Safety Features
RoHS3 compliant
TO-247-3 package for reliable thermal management
Compatibility
Through-hole mounting for easy installation
Application Areas
Industrial motor drives
Power supplies
Welding equipment
Induction heating
Lighting ballasts
Product Lifecycle
Current production, no discontinuation plans
Replacement or upgrade models available if needed
Key Reasons to Choose This Product
High power density and efficiency
Fast switching capability for high-frequency applications
Robust design for reliable operation in industrial environments
Wide operating temperature range
RoHS compliance for use in diverse applications
NGTB30N135IHRFairchild (onsemi)