Manufacturer Part Number
NGTB30N120FL2WG
Manufacturer
onsemi
Introduction
This product is a discrete semiconductor device, specifically a single transistor Insulated Gate Bipolar Transistor (IGBT) from the onsemi brand.
Product Features and Performance
Trench Field Stop IGBT technology
Rated for 1200V Collector-Emitter Voltage
Rated for 60A Collector Current
Low Vce(on) of 2.3V at 15V gate, 30A collector
Fast Reverse Recovery Time of 240ns
220nC Gate Charge
120A Pulsed Collector Current Capability
6mJ Turn-On and 700µJ Turn-Off Switching Energy
Product Advantages
High Voltage and Current Handling Capability
Low Conduction and Switching Losses
Fast Switching Performance
Robust Design for Reliable Operation
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1200V
Current Collector (Ic) (Max): 60A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Reverse Recovery Time (trr): 240ns
Gate Charge: 220nC
Current Collector Pulsed (Icm): 120A
Switching Energy: 2.6mJ (on), 700µJ (off)
Td (on/off) @ 25°C: 98ns/210ns
Quality and Safety Features
RoHS3 Compliant
TO-247 Package for Reliable Mounting and Thermal Management
Operating Temperature Range: -55°C to 175°C
Compatibility
This IGBT is a standard input device compatible with common gate drive circuitry.
Application Areas
Power Conversion and Motor Drive Applications
Inverters, Converters, and Switching Power Supplies
Industrial and Home Appliance Electronics
Product Lifecycle
This product is an actively supported and available IGBT solution from onsemi. No discontinuation is currently planned, and upgrades or replacements may be available in the future.
Key Reasons to Choose This Product
High Voltage and Current Capability for Demanding Applications
Low Conduction and Switching Losses for Improved Efficiency
Fast Switching Performance for High-Speed Power Conversion
Robust and Reliable Design for Long-Term Operation
RoHS Compliance for Environmental Responsibility
Availability and Support from a Leading Semiconductor Manufacturer
NGTB30N135IHRFairchild (onsemi)