Manufacturer Part Number
NGTB25N120FL3WG
Manufacturer
onsemi
Introduction
High-power single IGBT transistor designed for industrial applications
Product Features and Performance
Trench Field Stop IGBT technology
High blocking voltage of 1200V
High current capability of 100A
Low on-state voltage of 2.4V
Fast switching with turn-on time of 15ns and turn-off time of 109ns
Low switching energy of 1mJ (on) and 700μJ (off)
Wide operating temperature range of -55°C to 175°C
Product Advantages
Efficient power conversion and control
Reliable high-power operation
Compact and easy to integrate design
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1200V
Current Collector (Ic) (Max): 100A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Reverse Recovery Time (trr): 114ns
Gate Charge: 136nC
Current Collector Pulsed (Icm): 100A
Quality and Safety Features
RoHS3 compliant
TO-247-3 through-hole package
Compatibility
Suitable for various industrial power conversion and control applications
Application Areas
Inverters
Motor drives
Welding equipment
Induction heating
Power supplies
Product Lifecycle
Currently available, no discontinuation planned
Key Reasons to Choose This Product
High power handling capability
Fast and efficient switching performance
Reliable high-temperature operation
Compact and easy to integrate design
RoHS compliance for environmental safety
NGTB30N135IHRFairchild (onsemi)