NGTB20N120IHLWG - onsemi

Manufacturer Part Number

NGTB20N120IHLWG

Manufacturer

onsemi

Introduction

High power IGBT transistor for industrial and power electronic applications

Product Features and Performance

High voltage rating up to 1200V

High current rating up to 40A

Low on-state voltage drop of 2.2V at 20A

Fast switching speed with turn-off time of 235ns

High power handling capability up to 192W

Product Advantages

Robust and reliable design for harsh environments

Efficient power conversion and control

Compact and space-saving package

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 1200V

Collector Current (Max.): 40A

Collector Current Pulsed: 200A

On-state Voltage Drop (Vce(on)): 2.2V @ 20A

Gate Charge: 200nC

Switching Energy (Eoff): 700μJ

Quality and Safety Features

Designed and tested to industry standards

Rugged TO-247-3 package for thermal management

Operating temperature range of -55°C to 150°C

Compatibility

Suitable for a wide range of industrial and power electronic applications

Application Areas

Motor drives

Power supplies

Inverters

Welding equipment

Industrial automation

Renewable energy systems

Product Lifecycle

This product is currently in active production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

High power handling and efficiency

Fast switching and low losses

Robust and reliable design

Wide operating temperature range

Compatibility with diverse applications