Manufacturer Part Number
NGTB15N60S1EG
Manufacturer
onsemi
Introduction
High-voltage, high-current IGBT (Insulated Gate Bipolar Transistor)
Product Features and Performance
N-channel, non-punch-through IGBT
Optimized for low conduction and switching losses
Rugged and reliable design
Suitable for high-power switching applications
Product Advantages
Efficient power conversion
High power density
Excellent thermal performance
Robust and reliable operation
Key Technical Parameters
Collector-Emitter Voltage (VCES): 600V
Collector Current (IC): 30A
On-State Voltage (VCE(on)): 1.7V @ 15V, 15A
Reverse Recovery Time (trr): 270ns
Gate Charge (Qg): 88nC
Quality and Safety Features
RoHS3 compliant
TO-220AB package for secure mounting and heat dissipation
Compatibility
Suitable for a wide range of high-power switching applications, such as motor drives, power supplies, and inverters
Application Areas
Industrial motor control
Power conversion and inversion
Renewable energy systems
Welding equipment
Household appliances
Product Lifecycle
This product is currently in active production and is not nearing discontinuation.
Replacement and upgrade options are available from the manufacturer.
Key Reasons to Choose This Product
High efficiency and low losses for improved system performance
Robust and reliable design for long-term operation
Compatibility with a wide range of high-power applications
Availability of replacement and upgrade options from the manufacturer
RoHS3 compliance for environmental responsibility