NGTB15N60R2FG - onsemi

Manufacturer Part Number

NGTB15N60R2FG

Manufacturer

onsemi

Introduction

This product is a discrete semiconductor device, specifically a single Insulated Gate Bipolar Transistor (IGBT) from onsemi.

Product Features and Performance

Operating Temperature: 175°C (TJ)

Power Rating: 54 W

Collector-Emitter Breakdown Voltage: 600 V

Collector Current (Max): 24 A

Collector-Emitter Saturation Voltage: 2.1 V @ 15 V, 15 A

Reverse Recovery Time: 95 ns

Gate Charge: 80 nC

Pulsed Collector Current: 60 A

Switching Energy: 550 J (on), 220 J (off)

Turn-on/Turn-off Delay Time: 70 ns / 190 ns

Product Advantages

High voltage and current handling capability

Low saturation voltage for improved efficiency

Fast switching times for high-speed applications

Suitable for a wide range of power conversion and control applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 600 V

Collector Current (Max): 24 A

Collector-Emitter Saturation Voltage: 2.1 V @ 15 V, 15 A

Reverse Recovery Time: 95 ns

Gate Charge: 80 nC

Quality and Safety Features

RoHS3 compliant

TO-220-3 package with insulated metal base for improved thermal performance

Compatibility

This IGBT is designed for use in a variety of power conversion and control applications.

Application Areas

Motor drives

Switched-mode power supplies

Induction heating

Welding equipment

Industrial automation and control systems

Product Lifecycle

The NGTB15N60R2FG is an active product from onsemi. There are no plans for discontinuation or replacement at this time.

Key Reasons to Choose This Product

High voltage and current handling capability for a wide range of power applications

Low saturation voltage for improved efficiency and reduced power losses

Fast switching times enabling high-speed and high-frequency operation

Robust TO-220-3 package with insulated metal base for reliable performance

RoHS3 compliance for use in environmentally-conscious applications