Manufacturer Part Number
NGTB25N120SWG
Manufacturer
onsemi
Introduction
High-performance trench IGBT transistor for power electronics applications
Product Features and Performance
Trench IGBT technology
1200V collector-emitter breakdown voltage
50A maximum collector current
4V maximum collector-emitter saturation voltage
154ns reverse recovery time
178nC gate charge
Product Advantages
High efficiency
Fast switching
Robust and reliable
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1200V
Current Collector (Ic) (Max): 50A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Reverse Recovery Time (trr): 154ns
Gate Charge: 178nC
Current Collector Pulsed (Icm): 100A
Switching Energy: 1.95mJ (on), 600J (off)
Td (on/off) @ 25°C: 87ns/179ns
Quality and Safety Features
Operating temperature range: -55°C to 175°C
385W maximum power
Compatibility
TO-247-3 package
Through-hole mounting
Application Areas
Power electronics
Motor drives
Inverters
Converters
Industrial and consumer applications
Product Lifecycle
Current product, no plans for discontinuation
Replacements and upgrades available as technology advances
Key Reasons to Choose This Product
High efficiency and fast switching for improved system performance
Robust and reliable design for industrial and consumer applications
Wide operating temperature range for versatile use
Industry-standard package and mounting for easy integration
Proven onsemi quality and safety
NGTB30N135IHRFairchild (onsemi)