Manufacturer Part Number
IXSH30N60C
Manufacturer
IXYS Corporation
Introduction
High-power IGBT transistor for industrial applications
Product Features and Performance
Power dissipation up to 200W
Collector-Emitter Breakdown Voltage (BVCES) of 600V
Collector Current (IC) of 55A
Low Collector-Emitter Saturation Voltage (VCE(on)) of 2.5V at 15V Gate-Emitter Voltage and 30A Collector Current
Fast Switching with Turn-On/Turn-Off Time of 30ns/90ns
High Switching Energy of 700μJ (turn-off)
Operating Temperature Range of -55°C to 150°C
Product Advantages
Reliable and efficient power switching
Compact TO-247 package for easy integration
Suitable for a wide range of industrial applications
Key Technical Parameters
IGBT Type: PT (Punch-Through)
Package: TO-247-3
Gate Charge: 100nC
Quality and Safety Features
Designed and manufactured to high quality standards
Robust construction for reliable operation
Compatibility
Compatible with various industrial control systems and power electronics circuits
Application Areas
Motor drives
Power inverters
Welding equipment
Industrial automation and control systems
Product Lifecycle
This IGBT model is currently in production and actively available
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
High power handling capability up to 200W
Excellent switching performance with fast turn-on and turn-off times
Low conduction losses due to low VCE(on)
Wide operating temperature range for versatile applications
Reliable and durable construction for long-term use
Compatibility with various industrial control and power electronics systems
