Manufacturer Part Number
IXSH45N120
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Single IGBT Transistor
Product Features and Performance
Power Rating: 300 W
Collector-Emitter Breakdown Voltage: 1200 V
Collector Current (Max): 75 A
Collector-Emitter Saturation Voltage (Max): 3 V @ 15 V, 45 A
Gate Charge: 150 nC
Pulsed Collector Current: 180 A
Turn-On/Turn-Off Delay Time: 80 ns / 400 ns
Product Advantages
High power handling capability
High voltage operation
Fast switching performance
Key Technical Parameters
Package: TO-247-3
Operating Temperature: -55°C to 150°C
Quality and Safety Features
Tested and qualified to industry standards
Compatibility
Through-hole mounting
Application Areas
Power conversion and control systems
Motor drives
Inverters
Welding equipment
Induction heating
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Robust power handling capability
High voltage operation for demanding applications
Fast switching performance for efficient power conversion
Industry-standard package and mounting for easy integration
Reliable and tested quality for critical applications
