Manufacturer Part Number
IXSH24N60AU1
Manufacturer
IXYS Corporation
Introduction
High-performance IGBT transistor for power electronics applications.
Product Features and Performance
600V collector-emitter breakdown voltage
48A maximum collector current
7V maximum collector-emitter saturation voltage
50ns reverse recovery time
75nC gate charge
96A maximum pulsed collector current
2mJ turn-off switching energy
100ns/450ns turn-on/turn-off delay times
Product Advantages
High power density
Fast switching
Low conduction losses
Reliable performance
Key Technical Parameters
Operating temperature range: -55°C to 150°C
Power rating: 150W
Collector-emitter breakdown voltage: 600V
Collector current (max): 48A
Collector-emitter saturation voltage: 2.7V
Quality and Safety Features
TO-247AD package for reliable thermal performance
Designed and tested for high quality and reliability
Compatibility
Suitable for use in a variety of power electronics applications.
Application Areas
Motor drives
Power supplies
Inverters
Converters
Industrial controls
Product Lifecycle
This product is currently available and there are no plans for discontinuation. Replacement or upgrade options may be available.
Key Reasons to Choose This Product
High power density and fast switching for efficient power conversion
Low conduction losses for improved energy efficiency
Reliable performance in a wide temperature range
Well-suited for a variety of power electronics applications
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