Manufacturer Part Number
SMMBT3904WT1G
Manufacturer
onsemi
Introduction
NPN Bipolar Junction Transistor (BJT)
Designed for general-purpose switching and amplification applications
Product Features and Performance
Operating temperature range: -55°C to 150°C
Power dissipation: 150 mW
Collector-Emitter Breakdown Voltage: 40 V
Collector Current: 200 mA
Collector-Emitter Saturation Voltage: 300 mV @ 5 mA, 50 mA
DC Current Gain: 100 min. @ 10 mA, 1 V
Transition Frequency: 300 MHz
Product Advantages
Suitable for automotive and other high-reliability applications
Excellent electrical performance and thermal stability
Compact surface-mount package (SC-70-3, SOT-323)
Key Technical Parameters
Transistor Type: NPN
Package: SC-70-3 (SOT-323)
Mounting Type: Surface Mount
RoHS Compliance: RoHS3 Compliant
Quality and Safety Features
AEC-Q101 qualified for automotive applications
Compliant with RoHS3 directive
Compatibility
Widely compatible with general-purpose NPN transistor applications
Application Areas
Switching and amplification circuits
Automotive electronics
General-purpose electronic devices
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacement or upgrade options are available from the manufacturer.
Key Reasons to Choose This Product
Reliable performance in high-temperature and automotive applications
Compact surface-mount package for space-constrained designs
Excellent electrical characteristics for a wide range of switching and amplification needs
Compliance with automotive and environmental regulations (AEC-Q101, RoHS3)
Availability of replacement and upgrade options from the manufacturer