Manufacturer Part Number
SMMBT2369LT1G
Manufacturer
onsemi
Introduction
NPN Bipolar Junction Transistor (BJT) in a small SOT-23-3 package
Product Features and Performance
Power rating of 225 mW
Collector-Emitter Breakdown Voltage (BVCEO) of 15 V
Collector Current (IC) of 200 mA
Collector Cutoff Current (ICBO) of 400 nA
Low Collector-Emitter Saturation Voltage (VCE(sat)) of 250 mV @ 1 mA, 10 mA
DC Current Gain (hFE) of at least 40 @ 10 mA, 1 V
Product Advantages
Compact SOT-23-3 surface mount package
Wide operating temperature range of -55°C to 150°C
Suitable for a variety of low-power amplifier, switch, and logic circuit applications
Key Technical Parameters
Power Rating: 225 mW
Collector-Emitter Breakdown Voltage (BVCEO): 15 V
Collector Current (IC): 200 mA
Collector Cutoff Current (ICBO): 400 nA
Collector-Emitter Saturation Voltage (VCE(sat)): 250 mV @ 1 mA, 10 mA
DC Current Gain (hFE): Minimum of 40 @ 10 mA, 1 V
Quality and Safety Features
RoHS3 compliant
Reliable operation within the specified temperature range
Compatibility
Suitable for a wide range of electronic circuits and applications that require a low-power NPN bipolar transistor
Application Areas
Amplifiers
Switches
Logic circuits
General-purpose transistor applications
Product Lifecycle
This product is an actively supported and available transistor solution from onsemi.
Replacement or upgrade options may be available if the product reaches end-of-life.
Key Reasons to Choose This Product
Compact and efficient SOT-23-3 package design
Wide operating temperature range for versatile applications
Excellent electrical characteristics, such as high breakdown voltage, low saturation voltage, and reasonable current gain
RoHS3 compliance for environmentally-friendly usage
Reliability and long-term availability from a reputable manufacturer, onsemi