SMMBT2907ALT1G - onsemi

Manufacturer Part Number

SMMBT2907ALT1G

Manufacturer

onsemi

Introduction

High-performance PNP bipolar junction transistor (BJT)

Designed for use in a variety of electronic circuits and applications

Product Features and Performance

Wide operating temperature range of -55°C to 150°C

Low collector-emitter saturation voltage (Vce(sat)) of 1.6V @ 50mA, 500mA

High DC current gain (hFE) of 100 @ 150mA, 10V

High transition frequency (fT) of 200MHz

Low collector cutoff current (ICBO) of 10nA

Rated for a maximum collector current (Ic) of 600mA

Rated for a maximum power dissipation of 300mW

Product Advantages

Excellent electrical characteristics for reliable performance

Wide temperature range and power handling capability

Small surface-mount package (SOT-23-3) for compact designs

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 60V

Collector Current (Ic): 600mA

Power Dissipation: 300mW

Operating Temperature Range: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant for environmental responsibility

Packaged in standard Tape & Reel (TR) format for easy handling and automation

Compatibility

Compatible with a variety of electronic circuits and applications requiring a high-performance PNP bipolar transistor

Application Areas

Amplifiers, switches, and biasing circuits in consumer electronics, industrial equipment, and telecommunications systems

Product Lifecycle

This product is an active and readily available component from the manufacturer, with no indications of discontinuation or impending obsolescence.

Key Reasons to Choose This Product

Excellent electrical characteristics and performance for reliable operation

Wide temperature range and power handling capability for versatile applications

Small surface-mount package for compact and space-efficient designs

RoHS3 compliance for environmental responsibility

Readily available in standard packaging format for ease of use and automation