Manufacturer Part Number
SMMBT4403LT1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
RoHS3 Compliant
SOT-23-3 (TO-236) Package
Operating Temperature: -55°C to 150°C
Power Rating: 300 mW
Collector-Emitter Breakdown Voltage (Max): 40 V
Collector Current (Max): 600 mA
Saturation Voltage (Max): 750 mV @ 50 mA, 500 mA
Transistor Type: PNP
DC Current Gain (hFE) (Min): 100 @ 150 mA, 2 V
Transition Frequency: 200 MHz
Surface Mount Mounting
Product Advantages
Compact and reliable SOT-23-3 package
Wide operating temperature range
High power and voltage handling capabilities
High DC current gain
High frequency performance
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 40 V
Collector Current: 600 mA
Saturation Voltage: 750 mV
DC Current Gain: 100
Transition Frequency: 200 MHz
Quality and Safety Features
RoHS3 Compliant
Reliable SOT-23-3 package
Compatibility
Compatible with a variety of electronic circuits and systems that require a high-performance PNP bipolar junction transistor.
Application Areas
General-purpose amplifier and switching applications
Power management circuits
Audio and signal processing circuits
Industrial and consumer electronics
Product Lifecycle
Currently available
No information on discontinuation or replacement
Key Reasons to Choose
Wide operating temperature range
High power and voltage handling capabilities
High DC current gain and transition frequency
Compact and reliable SOT-23-3 package
RoHS3 Compliant