Manufacturer Part Number
SMMBTA56LT1G
Manufacturer
onsemi
Introduction
Bipolar Junction Transistor (BJT)
PNP type
Designed for general-purpose amplifier and switching applications
Product Features and Performance
Optimized for automotive and industrial applications
Wide operating temperature range: -55°C to 150°C
Low collector-emitter saturation voltage
High DC current gain
High transition frequency of 50MHz
Product Advantages
Excellent thermal and electrical characteristics
Reliable performance in harsh environments
Suitable for high-speed switching and amplification
Key Technical Parameters
Power Rating: 225mW
Collector-Emitter Breakdown Voltage: 80V
Collector Current (Max): 500mA
Collector Cutoff Current (Max): 100nA
DC Current Gain (Min): 100 @ 100mA, 1V
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Reliable performance in various operating conditions
Compatibility
Compatible with various electronic circuits and systems
Application Areas
Automotive electronics
Industrial control systems
General-purpose amplifiers and switches
Product Lifecycle
Current product with no indication of discontinuation
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
Robust and reliable performance in harsh environments
Suitable for high-speed switching and amplification
Optimized for automotive and industrial applications
Excellent thermal and electrical characteristics
RoHS3 compliance and AEC-Q101 qualification