SMMBTA56WT1G - onsemi

Manufacturer Part Number

SMMBTA56WT1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), PNP type

Product Features and Performance

150 mW power dissipation

80 V collector-emitter breakdown voltage

500 mA collector current

100 nA collector cutoff current

250 mV collector-emitter saturation voltage

100 minimum DC current gain

50 MHz transition frequency

Product Advantages

Compact SC-70, SOT-323 surface mount package

Wide operating temperature range of -55°C to 150°C

Compliant with RoHS 3 directive

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 80 V

Current Collector (Ic) (Max): 500 mA

Current Collector Cutoff (Max): 100 nA

Vce Saturation (Max) @ Ib, Ic: 250 mV @ 10 mA, 100 mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100 mA, 1 V

Frequency Transition: 50 MHz

Quality and Safety Features

RoHS 3 compliant

Compatibility

Surface mount SC-70, SOT-323 package

Application Areas

Suitable for a variety of electronic circuits and applications

Product Lifecycle

This product is an active and widely available component.

Key Reasons to Choose This Product

Compact surface mount package

Wide operating temperature range

High performance parameters (voltage, current, gain, frequency)

RoHS 3 compliance for environmentally-friendly use