Manufacturer Part Number
SMMBTA92LT1G
Manufacturer
onsemi
Introduction
Bipolar Junction Transistor (BJT) in a compact SOT-23-3 package
Designed for general-purpose amplifier and switching applications
Product Features and Performance
Operating temperature range: -55°C to 150°C
Power rating: 300 mW
Collector-emitter breakdown voltage: 300 V
Collector current (max): 500 mA
Collector cutoff current (max): 250 nA
Saturation voltage: 500 mV @ 2 mA, 20 mA
DC current gain: 25 min @ 30 mA, 10 V
Transition frequency: 50 MHz
Product Advantages
Compact SOT-23-3 package
Suitable for general-purpose amplifier and switching applications
Automotive-grade and AEC-Q101 qualified
Key Technical Parameters
Transistor type: PNP
Package: TO-236-3, SC-59, SOT-23-3
Mounting type: Surface mount
RoHS compliance: RoHS3 compliant
Quality and Safety Features
Automotive-grade and AEC-Q101 qualified
Complies with RoHS3 directive
Compatibility
Suitable for general-purpose amplifier and switching applications
Application Areas
Automotive electronics
Industrial control systems
Consumer electronics
Product Lifecycle
Currently available
No information on upcoming discontinuation or replacements
Several Key Reasons to Choose This Product
Compact SOT-23-3 package
Suitable for a wide range of general-purpose amplifier and switching applications
Automotive-grade and AEC-Q101 qualified for reliable performance
RoHS3 compliant for environmental compliance
Wide operating temperature range of -55°C to 150°C