SMMBT5551LT1G - onsemi

Manufacturer Part Number

SMMBT5551LT1G

Manufacturer

onsemi

Introduction

The SMMBT5551LT1G is a NPN bipolar junction transistor (BJT) in a SOT-23-3 (TO-236) package.

Product Features and Performance

Rated for a maximum collector current of 600 mA

Designed to withstand up to 160 V collector-emitter voltage

Offers a minimum DC current gain (hFE) of 80 at 10 mA and 5 V

Supports operating temperatures from -55°C to 150°C

Product Advantages

Compact SOT-23-3 (TO-236) surface mount package

High voltage and current handling capabilities

Robust and reliable performance over a wide temperature range

Key Technical Parameters

Power Rating: 225 mW

Collector-Emitter Breakdown Voltage (Max): 160 V

Collector Current (Max): 600 mA

Collector Cutoff Current (Max): 100 nA

Collector-Emitter Saturation Voltage (Max): 200 mV @ 5 mA, 50 mA

DC Current Gain (hFE) (Min): 80 @ 10 mA, 5 V

Quality and Safety Features

RoHS3 compliant

Tape and reel packaging for automated assembly

Compatibility

Compatible with a variety of electronic circuits and applications that require a high-performance NPN bipolar transistor

Application Areas

Amplifiers

Switches

Logic circuits

Power supplies

General-purpose electronics

Product Lifecycle

This product is currently in production and available for purchase. There are no immediate plans for discontinuation, and suitable replacement or upgrade options may be available from the manufacturer if needed.

Key Reasons to Choose This Product

Reliable and robust performance over a wide temperature range

High voltage and current handling capabilities

Compact and easy-to-use surface mount package

RoHS3 compliance for environmentally-friendly applications

Availability in tape and reel packaging for automated assembly