SMMBT4401LT1G - onsemi

Manufacturer Part Number

SMMBT4401LT1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Single Bipolar Junction Transistor (BJT)

NPN Transistor

Product Features and Performance

High-frequency operation up to 250 MHz

Low collector-emitter saturation voltage of 500 mV @ 500 mA

High DC current gain of 100 min @ 150 mA, 1 V

Wide operating temperature range of -55°C to 150°C

Product Advantages

Excellent high-frequency performance

Low saturation voltage for efficient power conversion

Robust design for reliable operation

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 40 V

Current Collector (Ic) (Max): 600 mA

Power Max: 300 mW

Package: SOT-23-3 (TO-236)

Quality and Safety Features

RoHS3 compliant

Tape & Reel packaging for automated assembly

Compatibility

Compatible with various electronic circuits and applications

Application Areas

Suitable for use in high-frequency RF amplifiers, switches, and logic circuits

Applicable in power supplies, motor controls, and other electronic devices

Product Lifecycle

This product is actively supported and not nearing discontinuation

Replacement or upgrade options are available if needed

Key Reasons to Choose This Product

Excellent high-frequency performance for efficient circuit design

Low saturation voltage for improved power efficiency

Robust design and wide temperature range for reliable operation

RoHS3 compliance for environmentally-friendly applications