SMMBT3906LT1G - onsemi

Manufacturer Part Number

SMMBT3906LT1G

Manufacturer

onsemi

Introduction

The SMMBT3906LT1G is a PNP bipolar junction transistor (BJT) in a SOT-23-3 (TO-236) package, designed for a variety of electronic applications.

Product Features and Performance

Power rating up to 300 mW

Collector-emitter breakdown voltage of 40 V

Collector current up to 200 mA

Saturation voltage of 400 mV at 5 mA and 50 mA

DC current gain (hFE) of at least 100 at 10 mA and 1 V

Transition frequency of 250 MHz

Product Advantages

Automotive-grade reliability (AEC-Q101 qualified)

Small, space-saving SOT-23-3 package

RoHS3 compliant

Wide operating temperature range of -55°C to 150°C

Key Technical Parameters

Package: TO-236-3, SC-59, SOT-23-3

Transistor Type: PNP

Power Rating: 300 mW

Collector-Emitter Breakdown Voltage: 40 V

Collector Current: 200 mA

Vce Saturation Voltage: 400 mV @ 5 mA, 50 mA

DC Current Gain (hFE): 100 @ 10 mA, 1 V

Transition Frequency: 250 MHz

Operating Temperature: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified for automotive applications

Compatibility

Suitable for a wide range of electronic applications, including amplifiers, switches, and driver circuits.

Application Areas

Automotive electronics

Industrial control systems

Consumer electronics

Telecommunications equipment

Product Lifecycle

The SMMBT3906LT1G is an active product, with no indication of near discontinuation. Replacement or upgrade options may be available from the manufacturer.

Key Reasons to Choose This Product

Automotive-grade reliability and performance

Wide operating temperature range

Small, space-saving package

RoHS3 compliance for environmentally-friendly applications

High-frequency operation up to 250 MHz

Suitable for a variety of electronic circuit designs