Manufacturer Part Number
SMMBT3904TT1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product - NPN Bipolar Junction Transistor (BJT)
Product Features and Performance
NPN transistor with high frequency capability
Wide operating temperature range of -55°C to 150°C
Low collector-emitter saturation voltage of 300mV at 5mA/50mA
High current gain of 100 at 10mA/1V
Transition frequency of 300MHz
Compact surface mount SC-75, SOT-416 package
Product Advantages
Suitable for high-frequency amplifier and switching applications
Excellent thermal and electrical stability
High reliability in automotive and industrial environments
Space-saving surface mount package
Key Technical Parameters
Power Rating: 300mW
Collector-Emitter Breakdown Voltage: 40V
Collector Current (Max): 200mA
DC Current Gain: 100 (min) at 10mA/1V
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Tape and reel packaging for automated assembly
Compatibility
Can be used as a replacement or upgrade for similar NPN BJT transistors in a variety of electronic circuits and applications.
Application Areas
High-frequency amplifiers
Switching circuits
Power management
Automotive electronics
Industrial control systems
Product Lifecycle
Current production part
No known plans for discontinuation
Replacements and upgrades available from onsemi
Key Reasons to Choose
Robust performance in high-frequency, high-temperature, and high-reliability applications
Compact surface mount package for space-constrained designs
Automotive and industrial grade quality and reliability
Readily available in tape and reel packaging for efficient manufacturing
