SMMBT5401LT1G - onsemi

Manufacturer Part Number

SMMBT5401LT1G

Manufacturer

onsemi

Introduction

The SMMBT5401LT1G is a general-purpose PNP bipolar junction transistor (BJT) from onsemi, designed for a wide range of electronic applications.

Product Features and Performance

Operating temperature range: -55°C to 150°C

Power rating: 300 mW

Collector-Emitter Breakdown Voltage: 150 V

Collector Current (Max): 500 mA

Collector Cutoff Current (Max): 50 nA

Collector-Emitter Saturation Voltage (Max): 500 mV

DC Current Gain (hFE) (Min): 60 @ 10 mA, 5 V

Transition Frequency: 300 MHz

Product Advantages

High breakdown voltage

Low collector cutoff current

Low collector-emitter saturation voltage

Wide operating temperature range

Suitable for high-frequency applications

Key Technical Parameters

Transistor Type: PNP Bipolar Junction Transistor

Package: SOT-23-3 (TO-236)

Mounting Type: Surface Mount

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Suitable for a wide range of electronic applications, including amplifiers, switches, and other general-purpose circuits.

Application Areas

Consumer electronics

Industrial equipment

Telecommunications

Automotive electronics

Product Lifecycle

The SMMBT5401LT1G is an active product and is not nearing discontinuation.

Replacements and upgrades may be available from onsemi or other manufacturers.

Key Reasons to Choose This Product

High breakdown voltage for enhanced circuit protection

Low collector cutoff current for improved performance

Low collector-emitter saturation voltage for efficient operation

Wide operating temperature range for versatile applications

Suitable for high-frequency applications due to high transition frequency

RoHS3 compliance for use in environmentally-conscious designs

Manufactured to high quality standards for reliable performance