SMMBT5551LT3G - onsemi

Manufacturer Part Number

SMMBT5551LT3G

Manufacturer

onsemi

Introduction

NPN Bipolar Junction Transistor (BJT) in a small SOT-23-3 package

Product Features and Performance

Surface mount package for compact design

Wide operating temperature range of -55°C to 150°C

High collector-emitter breakdown voltage of 160V

High collector current capability of up to 600mA

Low collector-emitter saturation voltage of 200mV @ 5mA, 50mA

High DC current gain of 80 minimum @ 10mA, 5V

Product Advantages

Compact size for space-constrained applications

Robust performance across wide temperature range

High voltage and current handling capabilities

Efficient power transfer with low saturation voltage

Key Technical Parameters

Package: SOT-23-3 (TO-236)

Voltage Collector Emitter Breakdown (Max): 160V

Current Collector (Ic) (Max): 600mA

Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V

Quality and Safety Features

RoHS3 compliant

Qualified to industry standards

Compatibility

Can be used as a replacement or upgrade for similar NPN BJT transistors in SOT-23-3 package

Application Areas

Switching and amplifier circuits

Power supplies

Motor control

Audio and video equipment

Telecommunications equipment

Product Lifecycle

Current and widely available product

No end-of-life notice at this time

Replacement or upgrade options may be available in the future

Key Reasons to Choose This Product

Compact size and surface mount package for space-saving designs

Wide operating temperature range for robust performance

High voltage and current handling capabilities for versatile applications

Efficient power transfer with low saturation voltage for improved efficiency

RoHS3 compliance for use in modern electronic systems