SMMBT2222AWT1G - onsemi

Manufacturer Part Number

SMMBT2222AWT1G

Manufacturer

onsemi

Introduction

The SMMBT2222AWT1G is a high-performance NPN bipolar junction transistor (BJT) from onsemi, suitable for a wide range of electronic applications.

Product Features and Performance

Power rating of 150 mW

Collector-emitter breakdown voltage of 40 V

Collector current of up to 600 mA

Saturation voltage of 1 V at 50 mA, 500 mA

Current gain (hFE) of at least 100 at 150 mA, 10 V

Transition frequency of 300 MHz

Surface mount package (SC-70, SOT-323)

Product Advantages

Excellent electrical characteristics for reliable performance

Compact surface mount package for efficient board space utilization

Wide operating temperature range of -55°C to 150°C

Key Technical Parameters

Power Rating: 150 mW

Collector-Emitter Breakdown Voltage: 40 V

Collector Current: 600 mA

Saturation Voltage: 1 V @ 50 mA, 500 mA

DC Current Gain (hFE): 100 min @ 150 mA, 10 V

Transition Frequency: 300 MHz

Operating Temperature: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant for environmental responsibility

Reliable performance across a wide temperature range

Compatibility

Suitable for a variety of electronic applications, including amplifiers, switches, and logic circuits

Application Areas

General-purpose electronic circuits

Switching and amplifying applications

Logic circuits

Consumer electronics

Product Lifecycle

Currently in production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Excellent electrical characteristics for reliable performance

Compact surface mount package for efficient board space utilization

Wide operating temperature range for versatile applications

RoHS3 compliance for environmental responsibility

Proven reliability and quality from onsemi