Manufacturer Part Number
SMMBD770T1G
Manufacturer
onsemi
Introduction
The SMMBD770T1G is a high-performance Schottky diode designed for RF applications, packaged in a compact SC-70-3 (SOT323) format.
Product Features and Performance
Schottky - Single Diode Type
Voltage - Peak Reverse (Max): 70V
Current - Max: 200 mA
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Power Dissipation (Max): 120 mW
Operating Temperature Range: -55°C to 125°C
Packaging: Tape & Reel (TR) for automated assembly
Product Advantages
High reverse voltage capacity up to 70V
Low forward voltage drop
Compact package suitable for high-density applications
High-temperature operation up to 125°C
Key Technical Parameters
Voltage - Peak Reverse (Max): 70V
Current - Max: 200 mA
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Power Dissipation (Max): 120 mW
Operating Temperature: -55°C ~ 125°C
Quality and Safety Features
Robust thermal management for reliable performance across a wide range of temperatures
Compatibility
Well-suited for use in RF circuit designs requiring efficient, fast switching diodes
Application Areas
RF applications
High-frequency switching power supplies
Voltage clamping applications
Detector diodes
Product Lifecycle
Status: Active
Not nearing discontinuation with readily available replacements or upgrades under the base product number SMMBD770
Several Key Reasons to Choose This Product
Supports high-frequency operation with minimal signal distortion
Optimal for space-constrained applications due to its small footprint
Capable of withstanding harsh environmental conditions
Ideal for design robustness in continuous or pulsed high current applications
Ensures consistent performance with low capacitance and dynamic resistance
Bullet-proof design suited for high-reliability applications in industrial and commercial markets