SMMBT2222ALT3G - onsemi

Manufacturer Part Number

SMMBT2222ALT3G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Transistor Bipolar (BJT) Single

Product Features and Performance

RoHS3 Compliant

SOT-23-3 (TO-236) Package

Operating Temperature Range: -55°C to 150°C

Power Rating: 300 mW

Collector-Emitter Breakdown Voltage (Max): 40 V

Collector Current (Max): 600 mA

Collector Cutoff Current (Max): 10 nA

Collector-Emitter Saturation Voltage (Max): 1 V @ 50 mA, 500 mA

DC Current Gain (hFE) (Min): 100 @ 150 mA, 10 V

Transition Frequency: 300 MHz

Product Advantages

RoHS3 Compliant

Compact SOT-23-3 (TO-236) Surface Mount Package

Wide Operating Temperature Range

High Breakdown Voltage

High Collector Current Capability

Low Collector Cutoff Current

Low Collector-Emitter Saturation Voltage

High DC Current Gain

High Transition Frequency

Key Technical Parameters

Manufacturer Part Number: SMMBT2222ALT3G

Package: TO-236-3, SC-59, SOT-23-3

Packaging: Tape & Reel (TR)

Transistor Type: NPN

Quality and Safety Features

RoHS3 Compliant

Compatibility

Suitable for a wide range of electronic applications that require a discrete NPN bipolar transistor

Application Areas

General-purpose electronics

Amplifiers

Switches

Logic circuits

Drivers

Automotive electronics

Product Lifecycle

This is an active product, with no plans for discontinuation currently.

Replacement or upgrade options may be available from the manufacturer.

Key Reasons to Choose This Product

RoHS3 compliance for environmental responsibility

Compact SOT-23-3 (TO-236) surface mount package for efficient board space utilization

Wide operating temperature range for versatile applications

High breakdown voltage, collector current, and transition frequency for high-performance requirements

Low collector cutoff current and collector-emitter saturation voltage for efficient circuit design

High DC current gain for reliable amplification and switching

Availability of replacement or upgrade options from the manufacturer