Manufacturer Part Number
SMMBT2907ALT3G
Manufacturer
onsemi
Introduction
This is a discrete PNP bipolar junction transistor (BJT) from onsemi, a leading semiconductor manufacturer.
Product Features and Performance
Designed for general-purpose amplifier and switch applications
Wide operating temperature range of -55°C to 150°C
High power handling capability of up to 300 mW
High collector-emitter breakdown voltage of up to 60 V
High collector current capability of up to 600 mA
Low collector cutoff current of only 10 nA
Fast transition frequency of 200 MHz
Product Advantages
Reliable and robust PNP transistor design
Excellent thermal and electrical performance
Compact and space-saving SOT-23-3 surface-mount package
RoHS-compliant and environmentally friendly
Key Technical Parameters
Power Rating: 300 mW
Collector-Emitter Breakdown Voltage: 60 V
Collector Current (Max): 600 mA
Collector Cutoff Current: 10 nA
Collector-Emitter Saturation Voltage: 1.6 V
DC Current Gain (hFE): 100 (min)
Transition Frequency: 200 MHz
Quality and Safety Features
Complies with RoHS3 environmental regulations
Manufactured in a certified quality management system
Reliable and durable construction for long-term use
Compatibility
Suitable for a wide range of electronic circuit designs
Can be used as a replacement or upgrade for similar PNP transistors
Application Areas
General-purpose amplifier and switching circuits
Audio amplifiers, power supplies, and control systems
Telecommunications, industrial, and consumer electronics applications
Product Lifecycle
This product is currently in active production and availability
Replacement or upgraded models may be available in the future as technology evolves
Key Reasons to Choose This Product
Excellent electrical and thermal performance for reliable operation
Compact and space-saving surface-mount packaging
Compliance with RoHS environmental regulations
Long-term availability and potential for future upgrades
Reputation and reliability of the onsemi brand