Manufacturer Part Number
STB35N65M5
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Product Features and Performance
Drain-Source Voltage (Vdss): 650 V
Drain Current (ID): 27 A at 25°C
On-Resistance (RDS(on)): 98 mΩ at 13.5 A, 10 V
Input Capacitance (Ciss): 3750 pF at 100 V
Power Dissipation (Ptot): 160 W at 25°C
Fast switching speed
Low gate charge
Rugged and reliable
Product Advantages
High voltage and current handling capability
Low on-resistance for high efficiency
Compact D2PAK surface mount package
Suitable for high-power, high-frequency applications
Key Technical Parameters
Vdss: 650 V
Id: 27 A at 25°C
RDS(on): 98 mΩ at 13.5 A, 10 V
Ciss: 3750 pF at 100 V
Ptot: 160 W at 25°C
Quality and Safety Features
RoHS3 compliant
Robust and reliable design
Compatibility
Suitable for a wide range of high-power, high-frequency applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Current product, no discontinuation plans
Availability of replacement parts and upgrades
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-resistance for high efficiency
Compact D2PAK surface mount package
Suitable for high-power, high-frequency applications
Rugged and reliable design
RoHS3 compliant
Availability of replacement parts and upgrades