STB34N65M5 - STMicroelectronics

Manufacturer Part Number

STB34N65M5

Manufacturer

STMicroelectronics

Introduction

High-voltage, high-performance N-channel power MOSFET in DPAK (TO-263) package

Product Features and Performance

Drain-to-source voltage (Vdss) of 650 V

On-resistance (Rds(on)) of 110 mΩ at 14 A, 10 V

Continuous drain current (Id) of 28 A at 25°C

Input capacitance (Ciss) of 2700 pF at 100 V

Power dissipation (Ptot) of 190 W at Tc

Gate-to-source voltage (Vgs) of ±25 V

Operating junction temperature (TJ) up to 150°C

Product Advantages

High voltage and low on-resistance for improved efficiency

Robust design for reliable operation

Compact DPAK (TO-263) surface mount package

Key Technical Parameters

Drain-to-source voltage (Vdss): 650 V

On-resistance (Rds(on)): 110 mΩ

Continuous drain current (Id): 28 A

Input capacitance (Ciss): 2700 pF

Power dissipation (Ptot): 190 W

Gate-to-source voltage (Vgs): ±25 V

Operating junction temperature (TJ): 150°C

Quality and Safety Features

RoHS3 compliant

DPAK (TO-263) package for reliable surface mount assembly

Compatibility

Suitable for a wide range of power conversion and control applications

Application Areas

Power supplies

Motor drives

Industrial and consumer electronics

Product Lifecycle

Current product, not nearing discontinuation

Replacements and upgrades available from STMicroelectronics

Key Reasons to Choose This Product

High voltage and low on-resistance for efficient power conversion

Robust and reliable design for demanding applications

Compact surface mount package for space-constrained designs

Wide operating temperature range up to 150°C

RoHS3 compliance for environmentally-friendly applications