Manufacturer Part Number
STB35N60DM2
Manufacturer
STMicroelectronics
Introduction
High-performance power MOSFET for power switching applications
Product Features and Performance
600V N-Channel MOSFET
Low on-resistance (RDS(on) = 110mΩ)
High current capability (ID = 28A at 25°C)
Fast switching speed
Low gate charge (Qg = 54nC)
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Efficient power conversion
Reliable and robust performance
Easy integration into power circuits
Key Technical Parameters
Drain-Source Voltage (VDS): 600V
Gate-Source Voltage (VGS): ±25V
On-Resistance (RDS(on)): 110mΩ
Continuous Drain Current (ID): 28A
Input Capacitance (Ciss): 2400pF
Power Dissipation (Ptot): 210W
Quality and Safety Features
RoHS3 compliant
DPAK (TO-263) package for efficient heat dissipation
Compatibility
Suitable for a wide range of power switching applications
Application Areas
Power supplies
Motor drives
Inverters
Switching mode power supplies
Product Lifecycle
This product is currently in production and available for purchase.
Replacements or upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
High efficiency and low power losses
Reliable and robust performance
Wide operating temperature range
Easy integration into power circuits
Cost-effective solution for power switching applications
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