Manufacturer Part Number
STB34NM60ND
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
N-Channel MOSFET
600V Drain-to-Source Voltage
29A Continuous Drain Current @ 25°C
110mΩ On-Resistance @ 14.5A, 10V
2785pF Input Capacitance @ 50V
190W Power Dissipation (Max) @ Tc
5V Gate Threshold Voltage @ 250A
10V Drive Voltage (Max Rds On, Min Rds On)
4nC Gate Charge @ 10V
Product Advantages
Excellent performance and efficiency
Robust design for reliable operation
Suitable for a wide range of power applications
Key Technical Parameters
Vdss: 600V
Vgs (Max): ±25V
Rds On (Max): 110mΩ
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Quality and Safety Features
RoHS3 Compliant
DPAK (TO-263) Package
Compatibility
Surface Mount Mounting
Application Areas
Power Conversion
Motor Drives
Switching Power Supplies
Industrial Electronics
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose
High performance and efficiency
Robust and reliable design
Suitable for a wide range of power applications
RoHS3 compliant for environmental responsibility