Manufacturer Part Number
STB32N65M5
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET transistor
Product Features and Performance
650V drain-to-source voltage
24A continuous drain current at 25°C
119mΩ maximum on-resistance
3320pF maximum input capacitance
150W maximum power dissipation
Product Advantages
High voltage and current handling capability
Low on-resistance for efficient power conversion
Compact surface-mount package
Key Technical Parameters
Vds: 650V
Vgs (Max): ±25V
Rds On (Max): 119mΩ @ 12A, 10V
Id (Continuous): 24A @ 25°C
Ciss (Max): 3320pF @ 100V
Power Dissipation (Max): 150W @ Tc
Quality and Safety Features
RoHS3 compliant
Reliable D2PAK (TO-263-3) package
Compatibility
Surface mount design
Compatible with various electronic applications
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
Product Lifecycle
Currently available
No plans for discontinuation
Key Reasons to Choose This Product
High voltage and current capability
Low on-resistance for efficient power conversion
Compact surface-mount package
Reliable and RoHS3 compliant
Suitable for a wide range of power electronics applications