STB30NM60ND - STMicroelectronics

Manufacturer Part Number

STB30NM60ND

Manufacturer

STMicroelectronics

Introduction

The STB30NM60ND is a high-performance N-channel MOSFET transistor designed for a wide range of power electronics and power conversion applications.

Product Features and Performance

600V drain-to-source voltage rating

25A continuous drain current at 25°C

130mΩ maximum on-resistance at 12.5A, 10V

Low input capacitance of 2800pF at 50V

190W maximum power dissipation at Tc

Operating temperature up to 150°C

Product Advantages

Excellent power handling capabilities

High efficiency and low power losses

Compact D2PAK surface mount package

Robust and reliable performance

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 600V

Gate-to-Source Voltage (Vgs): ±25V

On-Resistance (Rds(on)): 130mΩ

Continuous Drain Current (Id): 25A

Input Capacitance (Ciss): 2800pF

Power Dissipation (Pd): 190W

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Suitable for a wide range of power electronics and power conversion applications

Application Areas

Switch-mode power supplies

Motor drives

Inverters and converters

Power factor correction circuits

Product Lifecycle

Current production

Replacement and upgrade options available

Key Reasons to Choose This Product

Excellent power handling and efficiency

Compact and reliable D2PAK package

Robust performance across a wide temperature range

Well-suited for a variety of power electronics applications