Manufacturer Part Number
STB33N65M2
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-performance N-channel MOSFET for industrial and consumer applications
Product Features and Performance
650V breakdown voltage
Low on-resistance (RDS(on)) of 140mΩ at 12A, 10V
High continuous drain current of 24A at 25°C
Fast switching speed
Low gate charge (Qg) of 41.5nC at 10V
Wide operating temperature range up to 150°C
Product Advantages
Excellent power efficiency
Reliable high-voltage operation
Compact surface-mount DPAK package
Suitable for high-power industrial and consumer applications
Key Technical Parameters
Drain-Source Voltage (VDS): 650V
Gate-Source Voltage (VGS): ±25V
Drain Current (ID): 24A
On-Resistance (RDS(on)): 140mΩ
Input Capacitance (Ciss): 1790pF
Power Dissipation (Ptot): 190W
Quality and Safety Features
RoHS3 compliant
Automotive-grade quality and reliability
Compatibility
Compatible with a wide range of industrial and consumer electronic applications
Application Areas
Switching power supplies
Inverters
Motor drives
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent power efficiency and high-voltage capability
Compact surface-mount package
Reliable and robust design for demanding applications
Broad compatibility and suitability for a wide range of industrial and consumer electronics
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