Manufacturer Part Number
STB32NM50N
Manufacturer
STMicroelectronics
Introduction
High-performance N-Channel MOSFET transistor
Product Features and Performance
High breakdown voltage of 500V
Very low on-resistance of 130mΩ
High continuous drain current of 22A
Fast switching speeds
Low gate charge of 62.5nC
Wide operating temperature range up to 150°C
Product Advantages
Excellent power handling capability
Efficient power conversion and control
Suitable for a variety of high-power applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 500V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 130mΩ
Continuous Drain Current (Id): 22A
Input Capacitance (Ciss): 1973pF
Power Dissipation (Ptot): 190W
Quality and Safety Features
RoHS3 compliant
Reliable MOSFET technology
Compatibility
Replacement for similar high-voltage, high-current N-Channel MOSFET transistors
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent power handling and efficiency
High reliability and long operating life
Suitable for a wide range of high-power applications
Cost-effective solution for power conversion and control