Manufacturer Part Number
STB34NM60N
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-current, N-channel MOSFET
Product Features and Performance
Suitable for switched-mode power supplies, motor drives, and other high-power applications
Excellent on-resistance and low gate charge for high efficiency
Low gate-to-source threshold voltage for easy drive
Product Advantages
High breakdown voltage (600V)
Low on-resistance (105mΩ)
High continuous drain current (29A)
Low gate charge (84nC)
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 105mΩ
Continuous Drain Current (Id): 29A
Input Capacitance (Ciss): 2722pF
Power Dissipation: 250W
Quality and Safety Features
RoHS3 compliant
DPAK (TO-263) package for efficient heat dissipation
Compatibility
Compatible with a variety of high-power applications, including switched-mode power supplies, motor drives, and other industrial electronics
Application Areas
Switched-mode power supplies
Motor drives
Industrial electronics
Product Lifecycle
Current product, no known plans for discontinuation
Replacements and upgrades available from STMicroelectronics
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-resistance and gate charge for high efficiency
Reliable and robust DPAK package
Compatibility with a wide range of high-power applications
Ongoing availability and support from STMicroelectronics
STB30NS15STMicroelectronics
STB35NF10VBSEMI