Manufacturer Part Number
STB36N60M6
Manufacturer
STMicroelectronics
Introduction
The STB36N60M6 is a 600V N-Channel MOSFET from STMicroelectronics' MDmesh M6 series, designed for high-voltage power conversion applications.
Product Features and Performance
600V Drain-Source Voltage Rating
99mΩ Maximum On-Resistance @ 15A, 10V
30A Continuous Drain Current @ 25°C
-55°C to 150°C Operating Temperature Range
Low Input Capacitance of 1960pF @ 100V
High Power Dissipation of 208W @ Tc
Product Advantages
Excellent Switching Performance
High Voltage Handling Capability
Low On-Resistance for High Efficiency
Robust Design for Demanding Applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 99mΩ @ 15A, 10V
Drain Current (Id): 30A @ 25°C
Input Capacitance (Ciss): 1960pF @ 100V
Power Dissipation (Pd): 208W @ Tc
Quality and Safety Features
RoHS3 Compliant
DPAK (TO-263) Package
Compatibility
Compatible with a wide range of high-voltage power conversion circuits and applications
Application Areas
Switched-Mode Power Supplies (SMPS)
Motor Drives
Uninterruptible Power Supplies (UPS)
Industrial Electronics
Household Appliances
Product Lifecycle
Currently in active production
No immediate plans for discontinuation
Replacements and upgrades may become available in the future
Key Reasons to Choose This Product
Excellent high-voltage performance and efficiency
Robust and reliable design for demanding applications
Compact and easy-to-integrate DPAK (TO-263) package
Wide operating temperature range of -55°C to 150°C
RoHS3 compliance for environmental responsibility
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