Manufacturer Part Number
STB37N60DM2AG
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET in DPAK package for automotive and industrial applications
Product Features and Performance
600V drain-to-source voltage
28A continuous drain current at 25°C (Tc)
110mΩ maximum on-resistance at 14A, 10V
Low input capacitance of 2400pF at 100V
210W maximum power dissipation at Tc
Suitable for switching and amplification applications
Product Advantages
High voltage and current handling capability
Low on-resistance for high efficiency
Compact DPAK package for space-constrained designs
Automotive-qualified for reliable performance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 110mΩ @ 14A, 10V
Continuous Drain Current (Id): 28A @ 25°C (Tc)
Input Capacitance (Ciss): 2400pF @ 100V
Power Dissipation (Pd): 210W @ Tc
Quality and Safety Features
ROHS3 compliant
AEC-Q101 automotive qualification
Compatibility
Suitable for switching and amplification applications in automotive, industrial, and consumer electronics
Application Areas
Motor drives
Power supplies
Inverters
Switching regulators
Industrial control systems
Product Lifecycle
Currently in production
No replacement or upgrade plans announced
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for efficient performance
Compact DPAK package for space-constrained designs
Automotive-qualified for reliable operation in harsh environments
Excellent thermal management with high power dissipation