Manufacturer Part Number
STB36NM60ND
Manufacturer
STMicroelectronics
Introduction
High-performance N-Channel Power MOSFET with FDmesh II technology for automotive applications
Product Features and Performance
600V Drain-Source Voltage
29A Continuous Drain Current
110mOhm On-Resistance
Fast Switching Capability
Low Gate Charge
Operating Temperature up to 150°C
Product Advantages
Excellent Thermal Performance
Robust and Reliable Design
Optimized for Automotive Applications
Compliant with AEC-Q101 Standard
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 110mOhm
Drain Current (Id): 29A
Power Dissipation (Ptot): 190W
Quality and Safety Features
RoHS3 Compliant
AEC-Q101 Qualified
Robust DPAK (TO-263) Package
Compatibility
Suitable for a wide range of automotive and industrial applications
Application Areas
Automotive Electronics
Motor Drives
Power Supplies
Switching Applications
Product Lifecycle
This product is currently in active production and is not nearing discontinuation. Replacement or upgrade options are available.
Key Reasons to Choose This Product
High Performance and Reliability for Automotive Applications
Excellent Thermal Management Capabilities
Robust and Durable Design
Compliant with Relevant Industry Standards
Wide Range of Compatibility and Application Areas