Manufacturer Part Number
STB3NK60ZT4
Manufacturer
STMicroelectronics
Introduction
High-performance N-Channel MOSFET transistor
Product Features and Performance
Drain to Source Voltage (Vdss): 600V
Vgs (Max): ±30V
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Current Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 25 V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50A
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Product Advantages
Robust and reliable performance
High voltage and current capability
Low on-resistance
Compact surface mount package
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Quality and Safety Features
RoHS3 Compliant
Supplier Device Package: D2PAK
Compatibility
Mounting Type: Surface Mount
Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB
Package: Tape & Reel (TR)
Application Areas
Power supply and conversion circuits
Motor control
Switching and driving applications
Product Lifecycle
Currently available, no information on discontinuation or replacements
Several Key Reasons to Choose This Product
High voltage and current handling capability
Low on-resistance for efficient power conversion
Compact and robust surface mount package
Reliable performance across wide temperature range
RoHS compliance for environmental safety
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