Manufacturer Part Number
STB36NM60N
Manufacturer
STMicroelectronics
Introduction
The STB36NM60N is a high-performance, N-channel MOSFET transistor designed for automotive and industrial applications. It is part of the Automotive, AEC-Q101, and MDmesh II series.
Product Features and Performance
600V Drain-to-Source Voltage (Vdss)
±25V Gate-to-Source Voltage (Vgs)
105mΩ Maximum On-Resistance (Rds(on)) at 14.5A, 10V
29A Continuous Drain Current (Id) at 25°C
2722pF Maximum Input Capacitance (Ciss) at 100V
210W Maximum Power Dissipation (Tc)
4V Maximum Gate Threshold Voltage (Vgs(th)) at 250A
6nC Maximum Gate Charge (Qg) at 10V
Product Advantages
Robust design for automotive and industrial applications
Low on-resistance for improved efficiency
High voltage handling capability
Surface mount package (DPAK/TO-263) for compact design
Key Technical Parameters
Package: DPAK (TO-263)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Quality and Safety Features
RoHS3 Compliant
AEC-Q101 Qualified
Compatibility
Suitable for a wide range of automotive and industrial applications
Application Areas
Power conversion and control circuits
Motor drives
Switching power supplies
Industrial automation and control systems
Product Lifecycle
The STB36NM60N is an active product and is not nearing discontinuation.
Replacement or upgrade options may be available from STMicroelectronics.
Key Reasons to Choose This Product
Robust and reliable design for demanding applications
High voltage and current handling capabilities
Low on-resistance for improved efficiency
Surface mount package for compact design
AEC-Q101 qualification for automotive applications
RoHS3 compliance for environmental friendliness