Manufacturer Part Number
STB33N60DM2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET in DPAK (TO-263) package
Product Features and Performance
600V drain-source voltage
130mΩ max on-resistance @ 12A, 10V
24A continuous drain current @ 25°C
Low input capacitance of 1870pF
High power dissipation of 190W
Suitable for high-frequency, high-efficiency switching applications
Product Advantages
High voltage and current handling capability
Low on-resistance for low conduction losses
Compact DPAK (TO-263) surface mount package
Efficient thermal performance
Key Technical Parameters
Voltage rating: 600V
On-resistance: 130mΩ max
Drain current: 24A continuous
Input capacitance: 1870pF max
Power dissipation: 190W
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation (-55°C to 150°C)
Compatibility
Surface mount DPAK (TO-263) package
Compatible with various high-frequency, high-efficiency power conversion applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and not nearing discontinuation
Replacement or upgraded models may be available in the future
Several Key Reasons to Choose This Product
High voltage and current handling capability for demanding applications
Low on-resistance for high efficiency and reduced power losses
Compact surface mount package for space-constrained designs
Reliable performance in high-temperature environments
Suitable for a wide range of high-frequency, high-efficiency power conversion applications
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