STB30NF10T4 - STMicroelectronics

Manufacturer Part Number

STB30NF10T4

Manufacturer

STMicroelectronics

Introduction

High-performance N-channel power MOSFET transistor

Suitable for high-power switching and amplification applications

Product Features and Performance

Low on-resistance (RDS(on) max. 45 mΩ @ 15 A, 10 V)

High current capability (continuous drain current ID up to 35 A at 25 °C)

Wide operating temperature range (-55 °C to 175 °C)

Fast switching speed

Low gate charge (Qg max. 55 nC @ 10 V)

Rugged and reliable design

Product Advantages

Efficient power conversion and management

Increased system reliability and performance

Suitable for high-power, high-frequency applications

Key Technical Parameters

Drain-to-Source Voltage (VDS): 100 V

Gate-to-Source Voltage (VGS): ±20 V

Power Dissipation (PD): 115 W (at Tc)

Input Capacitance (Ciss): 1180 pF @ 25 V

Threshold Voltage (VGS(th)): 4 V @ 250 A

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Surface mount (D2PAK package) for easy integration into PCBs

Application Areas

Power supplies

Motor drives

Inverters

Industrial automation

Telecommunications equipment

Product Lifecycle

Current product, no discontinuation planned

Replacements and upgrades available as technology evolves

Key Reasons to Choose This Product

Excellent performance-to-cost ratio

Reliable and robust design for demanding applications

Wide operating temperature range for versatile use

Fast switching capability for high-frequency applications

Surface mount package for easy PCB integration