Manufacturer Part Number
STB30N65M2AG
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET with superior performance characteristics for automotive applications.
Product Features and Performance
High voltage rating of 650V
Low on-resistance of 180mΩ
Continuous drain current of 20A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 1440pF
Maximum power dissipation of 190W
Product Advantages
Excellent reliability and ruggedness for automotive use
Supports high voltage and high current applications
Efficient power conversion with low losses
Suitable for harsh environment and high-temperature operations
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 650V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 180mΩ @ 10A, 10V
Drain Current (Id): 20A (Tc)
Input Capacitance (Ciss): 1440pF @ 100V
Power Dissipation (Pd): 190W (Tc)
Quality and Safety Features
AEC-Q101 automotive qualified
RoHS3 compliant
Compatibility
Suitable for a wide range of automotive and industrial applications
Application Areas
Automotive systems (e.g., motor drives, power supplies, inverters)
Industrial power conversion and control circuits
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacement or upgraded models may become available in the future.
Key Reasons to Choose This Product
Excellent performance and reliability for automotive applications
Supports high voltage and high current requirements
Efficient power conversion with low losses
Suitable for harsh environments and high-temperature operations
Automotive qualification and RoHS compliance
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