Manufacturer Part Number
STB30N65M5
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET in a D2PAK package
Part of the MDmesh V series
Product Features and Performance
Drain to Source Voltage (Vdss) of 650V
Maximum Gate-Source Voltage (Vgs) of ±25V
On-state Resistance (Rds(on)) of 139mΩ at 11A, 10V
Continuous Drain Current (Id) of 22A at 25°C
Input Capacitance (Ciss) of 2880pF at 100V
Maximum Power Dissipation of 140W at Tc
Product Advantages
Excellent energy efficiency due to low on-state resistance
High avalanche capability and ruggedness
Suitable for high-voltage, high-current switching applications
Key Technical Parameters
MOSFET Technology: N-Channel
Threshold Voltage (Vgs(th)) of 5V at 250A
Gate Charge (Qg) of 64nC at 10V
Operating Temperature up to 150°C
Quality and Safety Features
RoHS3 compliant
D2PAK surface mount package
Compatibility
Suitable for a wide range of high-voltage, high-current power electronics applications
Application Areas
Switched-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Currently in active production
No known plans for discontinuation
Key Reasons to Choose This Product
Excellent performance and efficiency characteristics
Robust and reliable design for demanding applications
Wide operating temperature range
Compatible with various high-power electronics systems
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