Manufacturer Part Number
STB30N80K5
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-power N-Channel MOSFET
Product Features and Performance
800V Drain-Source Voltage
24A Continuous Drain Current (at 25°C)
180mΩ On-Resistance (at 12A, 10V)
1530pF Input Capacitance (at 100V)
250W Power Dissipation (at Tc)
-55°C to 150°C Operating Temperature Range
Product Advantages
Robust design for high-voltage, high-power applications
Low on-resistance for efficient power conversion
Wide operating temperature range
Key Technical Parameters
Drain-Source Voltage (Vdss): 800V
Gate-Source Voltage (Vgs): ±30V
Continuous Drain Current (Id): 24A (at 25°C)
On-Resistance (Rds(on)): 180mΩ (at 12A, 10V)
Input Capacitance (Ciss): 1530pF (at 100V)
Power Dissipation: 250W (at Tc)
Quality and Safety Features
RoHS3 Compliant
DPAK (TO-263) Package
Compatibility
Surface Mount Mounting
Tape & Reel Packaging
Application Areas
High-voltage, high-power switching applications
Power supplies
Motor drives
Industrial electronics
Product Lifecycle
Active and available
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
Robust and reliable high-voltage, high-power performance
Efficient power conversion with low on-resistance
Wide operating temperature range for diverse applications
Surface mount packaging and tape & reel availability for easy integration
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