Manufacturer Part Number
STB28NM60ND
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
N-Channel MOSFET Transistor
Product Features and Performance
600V Drain to Source Voltage (Vdss)
23A Continuous Drain Current (Id) at 25°C
150mOhm Maximum On-Resistance (Rds(on)) at 11.5A, 10V
2090pF Maximum Input Capacitance (Ciss) at 100V
190W Maximum Power Dissipation at Tc
5V Maximum Threshold Voltage (Vgs(th)) at 250A
10V Maximum Drive Voltage (for Min/Max Rds(on))
5nC Maximum Gate Charge (Qg) at 10V
Product Advantages
FDmesh II Technology for improved performance
ROHS3 Compliant
DPAK (TO-263) Surface Mount Package
Key Technical Parameters
Voltage Rating: 600V
Current Rating: 23A
On-Resistance: 150mOhm
Input Capacitance: 2090pF
Power Dissipation: 190W
Quality and Safety Features
ROHS3 Compliant
Suitable for High Power Applications
Compatibility
Compatible with Surface Mount Technology (SMT) Assembly
Application Areas
Power Supplies
Motor Drives
Industrial Controls
Lighting
Appliances
Product Lifecycle
Current production model, no discontinuation planned
Replacement/upgrade models available if required
Key Reasons to Choose
Excellent performance characteristics
Compact DPAK (TO-263) package
Proven FDmesh II technology
ROHS3 compliance for environmental safety
Suitability for high power, high voltage applications