Manufacturer Part Number
STB28N60M2
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-performance N-channel power MOSFET in a DPAK (TO-263) package.
Product Features and Performance
Optimized for high-voltage, high-current switching applications
Ultra-low on-resistance for low conduction losses
High avalanche energy capability
Excellent switching performance
Rugged and reliable design
Product Advantages
Efficient power conversion
Low power dissipation
High reliability
Versatile applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Maximum Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 150mΩ @ 11A, 10V
Continuous Drain Current (Id): 22A (at Tc = 25°C)
Input Capacitance (Ciss): 1440pF @ 100V
Power Dissipation (Ptot): 170W (at Tc = 25°C)
Quality and Safety Features
RoHS3 compliant
Qualified to automotive and industrial standards
Compatibility
Suitable for a wide range of high-voltage, high-current switching applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Welding equipment
Industrial automation and control systems
Product Lifecycle
Currently available
No plans for discontinuation
Replacement or upgrade options available
Key Reasons to Choose This Product
Excellent efficiency and low power dissipation
High voltage and current handling capabilities
Reliable and rugged design
Automotive and industrial grade quality
Versatile applications
STB270N04STMicroelectronics
STB3055L2 TO220VBsemi