STB26N60M2 - STMicroelectronics

Manufacturer Part Number

STB26N60M2

Manufacturer

STMicroelectronics

Introduction

The STB26N60M2 is a high-performance N-channel MOSFET in a DPAK package, designed for a wide range of power conversion and motor control applications.

Product Features and Performance

600V drain-to-source voltage rating

Low on-resistance of 165mΩ at 10A and 10V

High current capability of 20A continuous drain current at 25°C

Low input capacitance of 1360pF at 100V

Operating temperature range of -55°C to 150°C

High power dissipation of 169W at 25°C

Product Advantages

Excellent switching performance for high-efficiency power conversion

Robust design for reliable operation in harsh environments

Compact DPAK package for space-constrained applications

Compatibility with standard MOSFET drivers and control circuits

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 600V

Gate-to-Source Voltage (Vgs): ±25V

On-Resistance (Rds(on)): 165mΩ @ 10A, 10V

Continuous Drain Current (Id): 20A @ 25°C

Input Capacitance (Ciss): 1360pF @ 100V

Power Dissipation (Ptot): 169W @ 25°C

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Suitable for a wide range of power conversion and motor control applications

Application Areas

Switch-mode power supplies

Motor drives

Uninterruptible power supplies (UPS)

Industrial automation and control systems

Product Lifecycle

The STB26N60M2 is an active product and not nearing discontinuation.

Replacement or upgrade options may be available from STMicroelectronics.

Key Reasons to Choose This Product

High-performance, reliable, and efficient MOSFET for power conversion and motor control applications

Robust design and wide operating temperature range for use in harsh environments

Compact DPAK package for space-constrained designs

Compatibility with standard MOSFET drivers and control circuits