Manufacturer Part Number
STB25NM60ND
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET for high-efficiency power conversion applications
Product Features and Performance
Robust and reliable 600V power MOSFET
Optimized for high-efficiency power conversion
Low on-resistance for low conduction losses
High speed and low switching losses
Wide operating temperature range up to 150°C
Product Advantages
Excellent thermal management capability
High power density design
Reliable performance in harsh environments
Suitable for a wide range of power conversion applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Maximum Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 160mΩ @ 10.5A, 10V
Continuous Drain Current (Id): 21A @ 25°C
Input Capacitance (Ciss): 2400pF @ 50V
Power Dissipation (Ptot): 160W @ Tc
Quality and Safety Features
RoHS3 compliant
Robust and reliable design
Suitable for harsh environments
Compatibility
Compatible with a wide range of power conversion applications
Application Areas
High-efficiency power supplies
Switched-mode power supplies (SMPS)
Motor drives
Inverters
Electric vehicles
Renewable energy systems
Product Lifecycle
Currently available
No plans for discontinuation
Replacements or upgrades may be available in the future
Several Key Reasons to Choose This Product
Excellent performance and efficiency
Robust and reliable design
Wide operating temperature range
Suitable for a variety of power conversion applications
RoHS3 compliance for environmental responsibility